Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Luo Jun¹, Zhao Sheng-Lei¹, Mi Min-Han¹, Chen Wei-Wei², Hou Bin², Zhang Jin-Cheng¹, Ma Xiao-Hua^{1, 2}, Hao Yue^{1, †,}

Off-state leakage currents in AlGaN/GaN HEMTs during the breakdown measurements. Gate leakage current I_G consists of source–gate leakage current I_sg and drain–gate leakage current I_dg.