Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Luo Jun¹, Zhao Sheng-Lei¹, Mi Min-Han¹, Chen Wei-Wei², Hou Bin², Zhang Jin-Cheng¹, Ma Xiao-Hua^{1, 2}, Hao Yue^{1, †,}

(a) Breakdown characteristics and (b) V_BR–L_G dependence of the AlGaN/GaN HEMTs with different gate length values.