Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Luo Jun1, Zhao Sheng-Lei1, Mi Min-Han1, Chen Wei-Wei2, Hou Bin2, Zhang Jin-Cheng1, Ma Xiao-Hua1, 2, Hao Yue1, †,
       

Schematic cross section of AlGaN/GaN HEMT.