Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Luo Jun
1
, Zhao Sheng-Lei
1
, Mi Min-Han
1
, Chen Wei-Wei
2
, Hou Bin
2
, Zhang Jin-Cheng
1
, Ma Xiao-Hua
1, 2
, Hao Yue
1, †,
Schematic cross section of AlGaN/GaN HEMT.