Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin

Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling

Liu Nai-Qing, Huang Li-Jie, Wang Rui-Qiang, Hu Liang-Bin^†,

(a) The variation of the Andreev reflection probability A₁ with the increase of the interface barrier height. (b) The variation of the Andreev reflection probability B₂ with the increase of the interface barrier height. The parameters used are the same as in Fig. 4. The energy of incident electrons is set at the Fermi level.