Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling
Liu Nai-Qing, Huang Li-Jie, Wang Rui-Qiang, Hu Liang-Bin†,
       

(a) The variation of the Andreev reflection probability A1 with the increase of the bias voltage. (b) The variation of the Andreev reflection probability B2 with the increase of the bias voltage. The parameters used are the same as in Fig. 1. The energy of incident electrons is set at the Fermi level.