Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films
Yang Jing1, Zhao De-Gang1, †, 
, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Le Ling-Cong1, Li Xiao-Jing1, He Xiao-Guang1, Zhang Li-Qun2, Yang Hui1, 2
, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Le Ling-Cong1, Li Xiao-Jing1, He Xiao-Guang1, Zhang Li-Qun2, Yang Hui1, 2 Depth profiles of carbon concentration for samples H1, L2, L3, L4, measured by SIMS.
