Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films
Yang Jing1, Zhao De-Gang1, †, 
, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Le Ling-Cong1, Li Xiao-Jing1, He Xiao-Guang1, Zhang Li-Qun2, Yang Hui1, 2
, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Le Ling-Cong1, Li Xiao-Jing1, He Xiao-Guang1, Zhang Li-Qun2, Yang Hui1, 2 Dependences of resistivity on NH3 flow rate (a) and pressure (b) of Mg-doped GaN films. The unit 1 Torr = 1.33322 × 102 Pa.
