Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mahmoudi Mohsen^{1, †,}, Ahangari Zahra², Fathipour Morteza¹

(a) Temperature and strain dependence of 2D variation matrix. (b) Histogram for normalized value of electrical parameters for the optimized suggested (dark region) device and the primitive proposed (light region) 4-ASiNR FET,V_DS= 0.4 V.