Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mahmoudi Mohsen^{1, †,}, Ahangari Zahra², Fathipour Morteza¹

(a) On–off current ratio and (b) transconductance of 4-ASiNR FET for various types of gate insulator materials versus the on-state current forV_DS= 0.4 V.