Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mahmoudi Mohsen^{1, †,}, Ahangari Zahra², Fathipour Morteza¹

(a) On–off current ratio in logarithmic scale, (b) subthreshold swing, (c) transconductance, and (d) the delay time characteristics of a 4-ASiNR FET forV_DS= 0.4 V;A_i–E_iclasses are selected according to Table 1.