Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mahmoudi Mohsen^{1, †,}, Ahangari Zahra², Fathipour Morteza¹

I_D–V_Gtransfer characteristic in (a) logarithmic and (b) linear scales of 4-ASiNR FET forV_DS= 0.3, 0.4, and 0.5 V. Subthreshold swing is calculated as SS ≈ ΔV_G/Δlg(I_D) from Fig. 4(a)and the transconductance is computed asg_m= dI_D/dV_Garound the on-state region (V_G(OFF) +V_DS) extracted from Fig. 4(b).