Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mahmoudi Mohsen^{1, †,}, Ahangari Zahra², Fathipour Morteza¹

Energy bandgap and the electron effective mass of 4-ASiNR as a function of the uniaxial tensile strain. The inset image shows the electron effective mass calculated by the analytical formula compared with the effective mass value derived from theE−Kdispersion relation.