Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
Mahmoudi Mohsen1, †, , Ahangari Zahra2, Fathipour Morteza1
       

(a) Energy bandgap of ASiNRs as a function of the ribbon’s width calculated by TB formalism and verified by DFT approach. (b)E−Kdispersion of relaxed 4-ASiNR.