Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mahmoudi Mohsen^{1, †,}, Ahangari Zahra², Fathipour Morteza¹

Schematics cross-section of (top) the simulated DG FET with the intrinsic 4-ASiNR as the channel material and (bottom) the self-consistent electrostatic potential profile along the device.