Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao, Zhou Xiao-Wei, Xu Sheng-Rui, Chen Da-Zheng, Wang Zhi-Zhe, Wang Xing, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue
       

Variations of Hall mobility (μ), 2DEG density (ns), and sheet resistance (Rs) for InAlN/InGaN and InAlN/GaN heterostructures with temperature.