Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Zhang Ya-Chao, Zhou Xiao-Wei, Xu Sheng-Rui, Chen Da-Zheng, Wang Zhi-Zhe, Wang Xing, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue

Profiles of the carrier concentration as a function of the depth for InAlN/InGaN and InAlN/GaN heterostructures, measured by CV method.