Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao
, Zhou Xiao-Wei
, Xu Sheng-Rui
, Chen Da-Zheng
, Wang Zhi-Zhe
, Wang Xing
, Zhang Jin-Feng
, Zhang Jin-Cheng
, Hao Yue
Sheet resistance mapping of 2-in InAlN/InGaN heterostructure wafer.