Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition
AFM images of surface morphology of InGaN channel with scan areas of (a) 5 × 5 and (b) 2 × 2 μm2.
Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition |
AFM images of surface morphology of InGaN channel with scan areas of (a) 5 × 5 and (b) 2 × 2 μm2. |
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