Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Zhang Ya-Chao, Zhou Xiao-Wei, Xu Sheng-Rui, Chen Da-Zheng, Wang Zhi-Zhe, Wang Xing, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue

(a) Overview two-beam bright field cross-sectional TEM image of the entire epilayer sample, taken near the [1–100] zone axis. (b) High resolution TEM cross-sectional image of the top InAlN/InGaN heterostructure grown by PMOCVD.