Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates
Mao Wei1, †, , She Wei-Bo1, Yang Cui2, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Hao Yue1
       

Relationship between the numbernof FFPs and the reverse breakdown voltageVBRas well as the FP efficiencyηin SD-CFP HEMTs.