Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates
Mao Wei1, †, 
, She Wei-Bo1, Yang Cui2, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Hao Yue1
, She Wei-Bo1, Yang Cui2, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Hao Yue1 Potential distributions in four HEMTs: (a) SD HEMT, (b) SD-FP HEMT with 2.2-μm DFP, (c) SD-FP HEMT with 2.86-μm DFP, (d) SD-CFP HEMT with four FFPs.
