Modulating doping and interface magnetism of epitaxial graphene on SiC(0001)
Zhou Pan, He Da-Wei†,
       

(a) Band structure of bilayer graphene with buffer layer doped by O on SiC(0001), with the top graphene energy bands being highlighted by red lines. (b) Partial charge density of theαband at theΓpoint. The isosurface is 0.05 e/Å3. Gray, yellow, and red balls denote C, Si, and O atoms, respectively.