Modulating doping and interface magnetism of epitaxial graphene on SiC(0001)
Zhou Pan, He Da-Wei†,
       

Band structures for one ((a) and (d)), two ((b) and (e)), three ((c) and (f)) carbon layers on the SiC(0001). Curves in panels (a)–(c) correspond to the perfect systems, while the curves in panels (d)–(f) correspond to the doped system with the first C layer decorated by one F atom.