Unexpected low thermal conductivity and large power factor in Dirac semimetal Cd<sub>3</sub>As<sub>2</sub>

Unexpected low thermal conductivity and large power factor in Dirac semimetal Cd₃As₂

Zhang Cheng^{1, 2}, Zhou Tong^{1, 2, 3}, Liang Sihang^{1, 2}, Cao Junzhi^{1, 2}, Yuan Xiang^{1, 2}, Liu Yanwen^{1, 2}, Shen Yao^{1, 2}, Wang Qisi^{1, 2}, Zhao Jun^{1, 2}, Yang Zhongqin^{1, 2, 3}, Xiu Faxian^{1, 2, †,}

Electrical transport properties of Cd₃As₂. (a) and (b) Temperature-dependent resistivity and mobility of Cd₃As₂, respectively. (c) The MR ratio as a function ofB, with distinct SdH oscillation observed at low temperatures. (d) Extracted resistivity oscillation amplitude at different temperatures. The inset in panel (d) is the normalized conductivity amplitude versus temperature which can be used to estimate the carrier effective mass by fitting to the equation Δσ_xx(T)/Δσ_xx(0) =λ(T)/sinh(λ(T)).