Characterization of vertical Au/<italic>β</italic>-Ga<sub>2</sub>O<sub>3</sub>single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

Characterization of vertical Au/β-Ga₂O₃single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

Liu X Z^{1, †,}, Yue C¹, Xia C T^{2, ‡,}, Zhang W L¹

The reverse breakdown characteristics of the Schottky diode.