Numerical simulation of modulation to incident laser by submicron to micron surface contaminants on fused silica
Yang Liang1, 2, Xiang Xia1, †, , Miao Xin-Xiang2, ‡, , Li Li1, Yuan Xiao-Dong2, Yan Zhong-Hua1, Zhou Guo-Rui2, Lv Hai-Bing2, Zheng Wan-Guo2, Zu Xiao-Tao1
       

Electric field ∣E∣ distributions inxzplane are parallel to the incident laser and pass through the center of the ellipsoid for different flattening of the ellipsoid: (a)a= 4λ,b=c=λ, (b)a= 4λ,b=c= 2λ, (c)a= 4λ,b=c= 3λ, (d)a=b=c= 4λ, and (e)a= 4λ,b=c= 5λas contaminant on the output surface. Left:Einxzplane (y= 89δ), right:Emaxalongzdirection.