Detection efficiency characteristics of free-running InGaAs/InP single photon detector using passive quenching active reset IC

Zheng Fu^{1, 2}, Wang Chao^{1, 3}, Sun Zhi-Bin¹, Zhai Guang-Jie^{1, †,}

Photon detection efficiency versus bias voltage at different deadtime with respect to gated regime and free-running regime. For example, 10 μs_–f and 10 μs_–g denotes 10 μs deadtime free-running regime and gated regime, respectively.