Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Bao Bei^a),^b), Shao Xian-Yi^c), Tan Lu^a),^b), Wang Wen-He^a),^b), Wu Yue-Shen^a),^b), Wen Li-Bin^a),^b), Zhao Jia-Qing^c), Tang Wei^c), Zhang Wei-Min^d), Guo Xiao-Jun†^c), Wang Shun‡^a),^b), Liu Ying§^a),^b),^e)

ln ρ versus (a) T ^−1/2 and (b) T ^−1/4 for distinct carrier densities induced by 5 distinct gate voltages. Three different colors represents three devices. The solid straight lines are linear fits for different temperature ranges. The vertical arrow indicates the departure from the VRH behaviour.