Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Bao Bei^a),^b), Shao Xian-Yi^c), Tan Lu^a),^b), Wang Wen-He^a),^b), Wu Yue-Shen^a),^b), Wen Li-Bin^a),^b), Zhao Jia-Qing^c), Tang Wei^c), Zhang Wei-Min^d), Guo Xiao-Jun†^c), Wang Shun‡^a),^b), Liu Ying§^a),^b),^e)

(a) Accumulated charge (Q, integrated from the gate current) versus time at different gate voltages from −2 V to −3 V. (b) Calculated gate voltage dependence of hole density of 3 devices. (c) Electrochemical doping dependence of four terminal conductivity. Data from 3 devices were shown. (d) Electrochemical doping dependence of mobilities of carriers of the three devices. Inset is mobility distribution histogram of 32 devices.