Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Bao Bei^a),^b), Shao Xian-Yi^c), Tan Lu^a),^b), Wang Wen-He^a),^b), Wu Yue-Shen^a),^b), Wen Li-Bin^a),^b), Zhao Jia-Qing^c), Tang Wei^c), Zhang Wei-Min^d), Guo Xiao-Jun†^c), Wang Shun‡^a),^b), Liu Ying§^a),^b),^e)

(a) and (b) typical transfer characteristics at 300 K in vacuum and in ambient conditions while V _DS was kept at −0.5 V. Chemical structure of ionic liquid [EMI][TFSI] is shown between (a) and (b).