Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Bao Bei^a),^b), Shao Xian-Yi^c), Tan Lu^a),^b), Wang Wen-He^a),^b), Wu Yue-Shen^a),^b), Wen Li-Bin^a),^b), Zhao Jia-Qing^c), Tang Wei^c), Zhang Wei-Min^d), Guo Xiao-Jun†^c), Wang Shun‡^a),^b), Liu Ying§^a),^b),^e)

(a) Molecular structure of IDTBT (top), and schematic illustration of the “face-on” orientations with red rectangular shapes denoting the conjugated backbone of the IDTBT thin film on the substrate. (b) top view of the ion gel gated device structure (with channel size of 500 μm × 1300 μm).