Recovery of PMOSFET NBTI under different conditions

Cao Yan-Rong†^a),^b), Yang Yi^a), Cao Cheng^a), He Wen-Long^a), Zheng Xue-Feng^b), Ma Xiao-Hua^c), Hao Yue^b)

Recovery stages of NBTI: (a) the superposition of threshold voltage shifts of two recovery cycles, (b) the normalized superposition of the final threshold voltage degradation after recovery relative to that after the previous degradation process, (c) the normalized superposition of the threshold voltage recovery after the recovery stage relative to the final degradation after the previous degradation process, (d) the superposition of the threshold voltage recovery after the recovery stage to the real degradation of this cycle ratio.