Recovery of PMOSFET NBTI under different conditions

Cao Yan-Rong†^a),^b), Yang Yi^a), Cao Cheng^a), He Wen-Long^a), Zheng Xue-Feng^b), Ma Xiao-Hua^c), Hao Yue^b)

Relevant species distribution in the gate oxide in the NBTI degradation process. Here ⊕ represents positive charges trapped in the oxide, ◯ represents inversion holes.