Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Zhong Jian^a), Yao Yao^a), Zheng Yue^a), Yang Fan^a), Ni Yi-Qiang^a), He Zhi-Yuan^a), Shen Zhen^a), Zhou Gui-Lin^a), Zhou De-Qiu^a), Wu Zhi-Sheng^a), Zhang Bai-Jun^b), Liu Yang†^a)

(a) Leakage current density divided by electric field versus square root of electric field for Schottky contact of recessed SBD. (b) The plots of calculated ϕ _t versus etching power of the ICP process.