Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Zhong Jian^a), Yao Yao^a), Zheng Yue^a), Yang Fan^a), Ni Yi-Qiang^a), He Zhi-Yuan^a), Shen Zhen^a), Zhou Gui-Lin^a), Zhou De-Qiu^a), Wu Zhi-Sheng^a), Zhang Bai-Jun^b), Liu Yang†^a)

I – V – T curves of recessed AlGaN/GaN SBD in the forward bias region and calculated I – V – T curves by the TFE model. (a) Etching power = 10 W, N = 4 × 10²⁴ cm⁻³, ϕ _Bn = 1.00 eV; (b) etching power = 20 W, N = 4 × 10²⁴ cm⁻³, ϕ _Bn = 0.96 eV; (c) etching power = 40 W, N = 4.5 × 10²⁴ cm⁻³, ϕ _Bn =0.95 eV; (d) etching power = 80 W, N = 6 × 10²⁴ cm⁻³, ϕ _Bn = 0.87 eV.