Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Zhong Jian^a), Yao Yao^a), Zheng Yue^a), Yang Fan^a), Ni Yi-Qiang^a), He Zhi-Yuan^a), Shen Zhen^a), Zhou Gui-Lin^a), Zhou De-Qiu^a), Wu Zhi-Sheng^a), Zhang Bai-Jun^b), Liu Yang†^a)

Typical experimental forward (a) and reverse (b) I – V characteristics of recessed-SBDs. Here, region I: 0 V V _pinch–off, region II: V V _pinch–off.