Landau level transitions in InAs/AlSb/GaSb quantum wells
Wu Xiao-Guang†a) 
, Pang Mib)
, Pang Mi
Landau level transitions in InAs/AlSb/GaSb quantum wells |
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Wu Xiao-Guang†
, Pang Mi |
| Magnetic field dependence of Landau levels of InAs/AlSb/GaSb quantum wells. In panel (a), the width of InAs layer is 130 angstrom, and in panel (b), it is 170 angstrom. The width of AlSb layer is 10 angstrom, and the width of GaSb layer is 50 angstrom. When the largest component of a state is from the conduction band, the dot symbol for the state energy is colored red for the spin-down state, and is colored green for the spin-up state. The top of the conduction band of InAs is taken as the energy zero point. The quantum well structure information is denoted as QW:130/10/50 in panel (a), and as QW:170/10/50 in panel (b). |
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