Effect of CuPc and MoO3 co-evaporated layer on the conductivity of organic light emitting diodes
He Ze-Shang, Yu Hao-Miao, Peng Huan, Hou Xiao-Yuan†
       
Capacitance–voltage characteristic of the device with structures (a) ITO/Al(5 nm)/Bphen(20 nm)/CuPc(100 nm)/Bphen(20 nm)/Al (the capacitance peak did not appear at 0 V bias is because the shift of zero point of built-in field) and (b) ITO/Al(5 nm)/Bphen(20 nm)/MoO3(100 nm)/Bphen(20 nm)/Al.