Coexistence of positive and negative magnetic entropy changes in CeMn2(Si1 − xGe x)2 compounds

Coexistence of positive and negative magnetic entropy changes in CeMn₂(Si_{1 − x}Ge_x)₂ compounds

Zuo Wen-Liang†, Hu Feng-Xia, Sun Ji-Rong, Shen Bao-Gen‡

(a) The XRD patterns of CeMn₂(Si_{1− x}Ge_x)₂ ( x = 0.2, 0.4, 0.6, 0.8) compounds at room temperature. (b) The dependence of the lattice parameters on the Ge concentration.