Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Li Xiao-Jing^a), Zhao De-Gang†^a), Jiang De-Sheng^a), Chen Ping^a), Zhu Jian-Jun^a), Liu Zong-Shun^a), Le Ling-Cong, Yang Jing^a), He Xiao-Guang^a), Zhang Li-Qun^b), Liu Jian-Ping, Zhang Shu-Ming^b), Yang Hui^a),^b)

CTLM I – V measurement for four samples with different Cp₂Mg flow rates when the spacing of the CTLM pattern is fixed as 30 μm at room temperature. The inset shows the structure diagram of the optimal contact layer for Ni/Au Ohmic contact to p-GaN.