Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
Li Xiao-Jinga), Zhao De-Gang†a), Jiang De-Shenga), Chen Pinga), Zhu Jian-Juna), Liu Zong-Shuna), Le Ling-Cong, Yang Jinga), He Xiao-Guanga), Zhang Li-Qunb), Liu Jian-Ping, Zhang Shu-Mingb), Yang Huia),b)
       
Specific contact resistivity ( ρ c) as a function of the thickness of p++-GaN contact layer.