Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Li Xiao-Jing^a), Zhao De-Gang†^a), Jiang De-Sheng^a), Chen Ping^a), Zhu Jian-Jun^a), Liu Zong-Shun^a), Le Ling-Cong, Yang Jing^a), He Xiao-Guang^a), Zhang Li-Qun^b), Liu Jian-Ping, Zhang Shu-Ming^b), Yang Hui^a),^b)

CTLM I − V measurement at room temperature for samples with different p⁺⁺-GaN thickness (Sample B: 12 nm, Sample C: 19 nm, Sample D: 21 nm, Sample E: 23 nm, Sample A: 25 nm, Sample F: 27 nm, Sample G: 36 nm) when the spacing of the CTLM pattern is fixed as 30 μm.