Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

Xie Ying-Tao^a),^b), Ouyang Shi-Hong^a),^b), Wang Dong-Ping^a),^b), Zhu Da-Long^a),^b), Xu Xin^a),^b), Tan Te^a),^b), Fong Hon-Hang†^a),^b)

Transfer characteristics of the devices with double SAM modification: (a) Ag S/D contacts modified with 4-FTP and SiO₂ gate oxides modified with HMDS; (b) Ag S/D contacts modified with 4-FTP and SiO₂ gate oxide modified with OTS.