Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

Xie Ying-Tao^a),^b), Ouyang Shi-Hong^a),^b), Wang Dong-Ping^a),^b), Zhu Da-Long^a),^b), Xu Xin^a),^b), Tan Te^a),^b), Fong Hon-Hang†^a),^b)

Molecule structures: (a) organic semiconductor (PTDPPTFT4); (b) 4-fluorothiophenol (4-FTP) used for modification of the silver bottom electrodes; (c) hexamethyldisilazane (HMDS) used for gate oxide modification; (d) octyltrichlorosilane (OTS-C8) used for gate oxide modification.