Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces |
Molecule structures: (a) organic semiconductor (PTDPPTFT4); (b) 4-fluorothiophenol (4-FTP) used for modification of the silver bottom electrodes; (c) hexamethyldisilazane (HMDS) used for gate oxide modification; (d) octyltrichlorosilane (OTS-C8) used for gate oxide modification. |
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