In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system
Yang Yi-Bina),b), Liu Ming-Ganga),b), Chen Wei-Jiea),b), Han Xiao-Biaoa),b), Chen Jiea),b), Lin Xiu-Qia),b), Lin Jia-Lia),b), Luo Huia),b), Liao Qianga),b), Zang Wen-Jiea),b), Chen Yin-Songa),b), Qiu Yun-Linga),b), Wu Zhi-Shenga),b), Liu Yang†a),b), Zhang Bai-Jun‡a),b)
       
Reflectivity (a), reflectivity mapping (b), and schematic diagrams (c) of the wafer bow and interference fringes changing of sample B. The reflectivity, which is usually used to calculate the film thickness and growth rate, is equivalent to the dash line at the center position in the reflectivity mapping.