Design and optimization of a SiC thermal emitter/absorber composed of periodic microstructures based on a non-linear method

Wang Wei-Jie^a),^b),^c),^d), Zhao Zhen-Guo^a),^b),^c), Zhao Yi^d), Zhou Hai-Jing^a),^b),^c), Fu Ce-Ji†^d)

Spectral-normal emissivity of the 4-cell PC with a SiC film of thickness d = 1.25 μm on the top (solid), a SiC film of thickness d = 7.0 μm at the bottom (dash), and the two SiC films on both sides simultaneously (dot).