Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Tang Lan-Feng^a),^b), Yu Guang^a),^b), Lu Hai†^a),^b), Wu Chen-Fei^a),^b), Qian Hui-Min^a),^b), Zhou Dong^a),^b), Zhang Rong^a),^b), Zheng You-Dou^a),^b), Huang Xiao-Ming^c)

Transfer curves of the a-IGZO TFT stressed by positive gate bias stress as a function of time under dark (a) and under white light illumination (b). The transfer curves are measured with V _DS = 0.1 V. The inset in panel (a) shows the cross-sectional schematic of the device structure. The inset in panel (b) shows the emission spectrum of the white LED used.