Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu Yuana), Chen Hai-Bob), Liu Yu-Rongc), Wang Xind), En Yun-Feia), Li Binc), Lu Yu-Dong†a)
       
Plots of normalized noise versus channel current under front gate operation in the PDSOI devices with four types of buried oxides.