Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu Yuan
a)
, Chen Hai-Bo
b)
, Liu Yu-Rong
c)
, Wang Xin
d)
, En Yun-Fei
a)
, Li Bin
c)
, Lu Yu-Dong†
a)
Plots of normalized noise versus channel current under front gate operation in the PDSOI devices with four types of buried oxides.