Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Liu Yuan^a), Chen Hai-Bo^b), Liu Yu-Rong^c), Wang Xin^d), En Yun-Fei^a), Li Bin^c), Lu Yu-Dong†^a)

Measured low frequency noises under back gate operation in the PDSOI devices with four types of buried oxides at V _bg– V _th = 10 V and V _ds = 0.5 V.