Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu Yuana), Chen Hai-Bob), Liu Yu-Rongc), Wang Xind), En Yun-Feia), Li Binc), Lu Yu-Dong†a)
       
Measured low frequency noises under front gate operation in the PD SOI devices with four types of buried oxides at V fg– V th = 3.7 V and V ds = 0.5 V.